模拟电子技术基础（西安邮电大学） 知到智慧树答案2024 z6948

第一章 单元测试

1、Which of the following is not a commonly used semiconductor material’? （ ）

A carbon
B lead
C silicon
D germanium
答案 lead

2、The characteristic of an ideal diode are those of a switch that can conduct current（ ） .

A in both directions
B in one direction only
C in both directions but in only one direction at a time
D depends on the circuit it is used in
答案 in one direction only

3、When a diode is doped with either a pentavalent or a trivalent impurity its resistance will （ ） .

A increase
B decrease
C make the resistance stable against variation due to temperature
答案 decrease

4、The piecewise linear model, equivalent circuit of the diode consists of （ ）.

A a junction capacitor, a battery, a small resistor, and the ideal diode
B a battery, a small resistor, and the ideal diode
C a battery and the ideal diode
D the ideal diode
答案 a battery, a small resistor, and the ideal diode

5、When a p-n junction is reverse-biased, its junction resistance is （ ）.

A high
B low
C determined by the components that are external to the device
D constantly changing
答案 high

第二章 单元测试

1、What is the value of the voltage dropped across forward-biased silicon diodes that are connected in parallel with each other? （ ）.

A 11.3 V
B 35 V
C 7 V
D 4 V
答案 7 V

2、The resistor voltage and resistor current in this circuit are （ ）. 

A 10 V, 5 mA
B 11 V, 2 mA
C 11 V, 11 mA
D 2 V, 11 mA
答案 11 V, 11 mA

3、Which of the following circuits is used to eliminate a portion of a signal? （ ）.

A Clipper
B Damper
C Voltage multiplier
D Voltage divider
答案 Clipper

4、The circuit shown here is a （ ）. 

A series clipper
B parallel clipper
C series clamper
D shunt clamper
答案 parallel clipper

5、The Zener diode must be operated such that （ ）.

A
B  is less than the specified 
C the applied voltage is greater than 
D All of these
答案 All of these

第三章 单元测试

1、In the active region, the base-emitter junction （ ）.

A and the base-collector junctions are both forward-biased
B and the base-collector junctions are both reverse-biased
C is forward-biased while the base-collector junction is reversed-biased
D is reverse-biased while the base-collector junction is forward-biased
答案 is forward-biased while the base-collector junction is reversed-biased

2、A BJT has measured dc current values of  = 0.1 mA and = 8.0 mA. When IB is varied by 100 μA, IC changes by 10 mA. What is the value of the βac for this device?（ ）.

A 80
B 10
C 100
D 800
答案 100

3、When a BJT is operating in the active region, the voltage drop from the base to the emitter  is approximately equal to the （ ）。

A base bias voltage
B base current times the base resistor
C diode drop (about 0.7 V)
D emitter voltage
答案 diode drop (about 0.7 V)

4、BJTs are commonly used as （ ）.

A the primary components in amplifiers
B series damper circuits
C the primary components in rectifiers
答案 the primary components in amplifiers

5、The condition where increase in bias current will not cause further increases in collector current is called （ ）.

A cutoff
B saturation
C active operation
答案 saturation

第四章 单元测试

1、When a BJT is biased in the cutoff region the collector-to-emitter voltage is typically equal to （ ）.

A the emitter voltage
B 03 V
C the collector current times the collector resistor
D the collector supply voltage
答案 the collector supply voltage

2、Calculate the collector-emitter voltage for this emitter-stabilized circuit.（ ） 

A 32 V
B 10.68 V
C 1335 V
D 14.24 V
答案 4.32 V

3、The difference between the resulting equations for a network in which an npn transistor has been replaced by a pnp transistor is （ ）.

A the values of the resistors
B the value of β
C the sign associates with the particular quantities
答案 the sign associates with the particular quantities

4、The term quiescent means （ ）.

A midpoint-biased
B at rest
C active
D inactive
答案 inactive

5、Voltage-divider bias stability is （ ）.

A dependent on alpha
B dependent of beta
C dependent on the collector resistor
D independent of beta
答案 independent of beta

第五章 单元测试

1、Given this configuration, determine the input impedance if VS = 40 mV, Rsense = 0.5 kΩ, and the input current is 20 μA.（ ）

A 5 MΩ
B 822 MΩ
C 1,500 Ω
D 582 kΩ
答案 1,500 Ω

2、The  transistor model replaces the （ ） with the junction diode’s ac resistance.

A collector-base junction
B collector-emitter junction
C emitter—base junction
答案 emitter—base junction

3、Calculate the voltage gain for this circuit. （ ）

A -137.25
B -8.4
C -7.91
D -16.34
答案 -137.25

4、A transistor amplifier has an input signal applied to its emitter terminal and an output signal taken from its collector terminal. The amplifier is a(n) （ ）.

A common-emitter amplifier
B common-base amplifier
C common-collector amplifier
D emitter follower
答案 common-base amplifier

5、The voltage gain of a very well-designed common collector amplifier configuration, using a pnp transistor, is （ ）.

A about -0.9
B about 0.9
C in the range 0.95 to 0.99
D in the range -0.95 to -0.99
答案 in the range 0.95 to 0.99

第六章 单元测试

1、Shockley’s equation defines the （ ） of the FET and are unaffected by the network in which the device is employed.

A  characteristics
B drain characteristics
C input/output characteristics
D transfer characteristics
答案 transfer characteristics

2、For an n-channel depletion MOSFET, = 8 mA and  = -6 V. If = 0.8 V, what is the value of the drain current, ? （ ）

A 8 mA
B 10.25 μA
C 10.28 mA
D 6 mA
答案 10.28 mA

3、The region of the JFET drain curve that lies between pinch-off and breakdown is called （ ）.

A the constant-voltage region
B the ohmic region
C the saturation region
答案 the saturation region

4、In the family of FETs, you can expect to find （ ）.

A an n-channel type
B a p-channel type
C unipolar structure
答案 an n-channel type
a p-channel type
unipolar structure

5、FETs usually （ ）.

A are less sensitive to temperature change than BJTs
B have a higher input impudence than BJTs
C are smaller in construction than BJTs
答案 are less sensitive to temperature change than BJTs
have a higher input impudence than BJTs
are smaller in construction than BJTs

第七章 单元测试

1、This graphical solution represents （ ）.

A fixed bias for an n-channel JFET
B voltage-divider bias for an n-channel JFET
C self bias for an n-channel JFET
答案 self bias for an n-channel JFET

2、Generally, it is good design practice for linear amplifiers to have operating points that close to （ ）.

A are close to saturation level
B the cut-off region
C the midpoint of the load line
答案 the midpoint of the load line

3、Which of the following biasing circuits can be used with E-MOSFETs? （ ）

A self bias
B zero bias
C drain-feedback bias
D current-source bias
答案 drain-feedback bias

4、The primary difference between JFETs and depletion-type MOSFETs is （ ）.

A JFETs can have positive values of  and levels of drain current that exceed 
B depletion-type MOSFETs can have positive values of  and levels of  that exceed 
C depletion-type MOSFETs can have only positive of 
D JFETs can have only positive values of 
答案 depletion-type MOSFETs can have positive values of  and levels of  that exceed

5、A JFET can be biased in several different ways. The common method(s) of biasing an n-channel JFET is(are) （ ）.

A self-bias configuration
B voltage-divider bias configuration
C fixed-bias configuration
答案 self-bias configuration
voltage-divider bias configuration
fixed-bias configuration

第八章 单元测试

1、The FET version of the BJT’s common-emitter configuration is the （ ） circuit.

A common-source
B common-gate
C common-drain
D common-current
答案 common-source

2、Calculate the input impedance for this FET amplifier. （ ）

A
B
C
D  = would depend on the drain current 
答案

3、Design this circuit for a voltage gain of 10. You have to calculate the value of resistor  and . It is desired that the transistor operate with a relatively high value of . For this device, a high value of  is defined as . （ ）

A
B
C
D
答案

4、The （ ） amplifier has high input impedance, low output impedance, and low voltage gain.

A common-gate
B common-drain
C common-source
答案 common-drain

5、The （ ） FET amplifier has low input impedance, high output impedance, and high voltage gain.

A common-gate
B common-drain
C common-source
答案 common-gate

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